| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| EDF8132A3MA-JD-F | 存储IC |
尔必达/ELPIDA |
BGA |
15+ |
5000 |
|||
| A23 | IC |
ALLWINNER/全志 |
BGA |
30000 |
||||
| NT5CC256M16DP-DI | 存储IC |
NANYA/南亚 |
BGA |
18+ |
50000 |
|||
| H5TQ1G63DFR-H9C | 存储IC |
SKHYNIX/海力士 |
BGA |
16+ |
30000 |
|||
| NT5CC128M16IP-DI | 存储IC |
NANYA/南亚 |
BGA |
19+ |
20000 |
|||
| H5TQ4G63CFR-RDC | 存储IC |
SKHYNIX/海力士 |
BGA |
17+ |
50000 |
|||
| KLM4G1FEPD-B031 | 存储IC |
SAMSUNG/三星 |
BGA |
16+ |
10000 |
|||
| M15F1G1664A-EFB | 存储IC |
ESMT/晶豪科技 |
BGA |
19+ |
30000 |
|||
| A33 | IC |
ALLWINNER/全志 |
BGA |
16+ |
10000 |
|||
| M29W160DB-90NI | IC |
ST/意法 |
TS0P48 |
01+ |
158 |
|||
| SST39VF800-70-4C-EK | IC |
SST |
TSOP48 |
04+ |
483 |
|||
| K9F1G08U0D-SIB0 | 内存芯片 |
SAMSUNG/三星 |
TS0P48 |
12+ |
50 |
|||
| H27UAG8T2ATR-BC | IC |
ABOV/现代 |
TS0P48 |
09+ |
6 |
|||
| MT47H128M16 | 内存芯片 |
MICRON/美光 |
10 |
|||||
| EM639165TS-6G | 存储IC |
ETRON/钰创 |
106 |
|||||
| MT48LC16M16A2P-75D | 内存芯片 |
MICRON/美光 |
09+ |
664 |
||||
| K4T51163QQ-BCE7 | 存储IC |
SAMSUNG/三星 |
04+ |
18 |
||||
| H5PS1G63EFR-S5C | IC |
ABOV/现代 |
17+ |
616 |
||||
| K4B1G1646D-BCK0 | IC |
SAMSUNG/三星 |
1750 |
|||||
| D9SGB | IC |
MICRON/美光 |
3704 |
|||||
| K9GBG08U0A /K9LBG08U0A | IC |
SAMSUNG/三星 |
119 |
|||||
| K9G8G08U0A | 其他被动元件 |
SAMSUNG/三星 |
4 |
|||||
| K9G8G08U0B | IC |
SAMSUNG/三星 |
43 |
|||||
| MT29F2G08ABAEA | 存储IC |
MICRON/美光 |
9 |
|||||
| K4S641632K-UC75 | 内存芯片 |
SAMSUNG/三星 |
739 |
|||||
| K4S561632H-UC75 | IC |
SAMSUNG/三星 |
88 |
|||||
| H5TQ2G83CFR-PBC | 其他被动元件 |
SKHYNIX/海力士 |
3642 |
|||||
| K4S511632B-TC75 | 内存芯片 |
SAMSUNG/三星 |
178 |
|||||
| H5DU5182ETR-E3C | IC |
ABOV/现代 |
47 |
|||||
| H5DU2562GTR-E3C | IC |
ABOV/现代 |
1917 |